TSMC has quietly begun volume production of its 2nm-class N2 process in Q4 2025 as planned, marking the company’s first GAA ...

A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...

A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for ...

Developed core technology that will allow practical implementation of high-density, low-power 3D DRAM, presented at IEEE International Electron Devices Meeting (IEDM) ...

The global power MOSFET market size was US$ 8.6 billion in 2021. The global power MOSFET market size is forecast to reach US$ 13.8 billion by 2030, growing at a compound annual growth rate (CAGR) of 6 ...

Unpacking the challenges with high-voltage power conversion and how SiC fits in. The pivotal advantages of SiC over traditional silicon in next-gen power converters. Rethinking circuit design for ...

The EPC2050 offers power systems designers a 350 V, 80 mΩ maximum R DS(on), 26 A peak current power transistor in an extremely small chip-scale package. These new devices are ideal for multi-level ...

European Union-funded project seeks to rearchitect chips to stop energy "leakage" and make everyday electronics, from cell phones to supercomputers, 10 times more energy efficient. Martin LaMonica is ...

The chipmaker will shed light on a series of changes it's making to transistors that ideally will keep a lid on the growing problem of power consumption. Michael Kanellos is editor at large at CNET ...

Properties of wide-bandgap materials, with a focus on SiC. How a bridgeless totem-pole topology can help cut losses. A breakdown of the half-bridge inverter topology The efficiency of power-conversion ...

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...